 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N-Channel, SC-70 Features * * * * * * * * Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6 ESD Protected Gate Pb-Free Package for Green Manufacturing (G Suffix) http://onsemi.com V(BR)DSS 30 V 1.5 W @ 2.5 V RDS(on) TYP 1.0 W @ 4.0 V 270 mA ID Max Applications Low Side Load Switch Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC Buck Converters Level Shifts SC-70 SOT-323 (3 LEADS) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25 C TA = 85 C TA = 25 C t =10 s PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 30 20 270 200 330 200 -55 to 150 270 260 mW Units V V mA Gate 1 3 Drain Source 2 Top View mA Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C mA C 1 2 3 MARKING DIAGRAM TDW 1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). SC-70 / SOT-323 CASE 419 STYLE 8 TD W = Device Code = Work Week PIN ASSIGNMENT Gate 1 3 Source 2 Top View Drain ORDERING INFORMATION Device NTS4001NT1 NTS4001NT1G Package SC-70 SC-70 (Pb-Free) Shipping 3000 Units/Reel 3000 Units/Reel (c) Semiconductor Components Industries, LLC, 2003 1 September, 2003 - Rev. 1 Publication Order Number: NTS4001N/D NTS4001N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 30 V VDS = 0 V, VGS = 10 V VGS = 0 V, ID = 100 A 30 60 1.0 1.0 V mV/ C A A ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) () VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA RG = 50 mA, 17 23 94 82 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 5.0 V, VDS = 24 V, ID = 0 1 A 0.1 VGS = 0 V, f = 1.0 MHz, VDS = 5 0 V 5.0 20 19 7.25 0.9 0.2 0.3 0.2 33 32 12 1.3 nC pF gFS VDS = 3.0 V, ID = 10 mA VGS = VDS, ID = 100 A 0.8 1.2 -3.4 1.0 1.5 80 1.5 2.0 mS 1.5 V mV/ C DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA TJ = 25C TJ = 125C 0.65 0.43 5.0 ns 0.7 V Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 8.0 A/s, IS = 10 mA 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTS4001N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 1.75 V 1.5 V 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2V VGS = 10 V to 3 V VGS = 2.75 V 2.5 V 2.25 V TJ = 25C ID, DRAIN CURRENT (AMPS) 0.1 VDS = 5 V 0.08 0.06 TJ = 125C 0.04 25C 0.02 TJ = -55C 0 1 1.2 1.4 1.6 2 1.8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.2 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25 VGS = 10 V 1.0 TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25 Figure 2. Transfer Characteristics TJ = 25C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5 0.75 TJ = 25C 0.5 TJ = -55C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 10 -25 0 25 50 75 100 125 150 IDSS, LEAKAGE (nA) 1000 ID = 0.01 A VGS = 10 V 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C 10 20 0 5 15 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTS4001N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 50 VDS = 0 V Ciss VGS = 0 V TJ = 25C 5 QG 4 C, CAPACITANCE (pF) 40 30 Crss 3 QGS 2 QGD 20 Ciss Coss 10 Crss 0 10 5 0 5 10 15 20 25 1 0 0 ID = 0.1 A TJ = 25C 0.6 0.2 0.4 0.8 QG, TOTAL GATE CHARGE (nC) 1 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Gate Charge 0.1 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS4001N PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S 1 2 B D G C 0.05 (0.002) N K J DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 H STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN http://onsemi.com 5 NTS4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTS4001N/D |
Price & Availability of NTS4001N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |